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| DSEP 60-12A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 60 A VRRM = 1200 V trr = 40 ns A C VRSM V 1200 VRRM V 1200 Type TO-247 AD DSEP 60-12A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 90C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 14.5 A; L = 180 H VA = 1.25*VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 60 500 23 1.5 -55...+175 175 -55...+150 A A A mJ A C C C W Nm g Applications q Features q q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25C mounting torque typical 230 0.8...1.2 6 q q q Symbol IR x Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 60 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 650 2.5 1.74 2.66 0.65 0.25 mA mA V V K/W K/W ns 14.3 A q VF y RthJC RthCH trr IRM q q q Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders IF = 1 A; -di/dt = 300 A/ms; VR = 30 V; TVJ = 25C VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms TVJ = 100C 40 7 Advantages q q q Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Dimensions see outlines.pdf (c) 2000 IXYS All rights reserved 1-2 008 IXYS reserves the right to change limits, test conditions and dimensions. DSEP 60-12A 100 A 80 IF 60 TVJ=150C TVJ=100C TVJ= 25C 10 mC Qr 8 TVJ= 100C VR = 600V 100 A 80 IRM TVJ= 100C VR = 600V 6 IF= 120A IF= 60A IF= 30A 60 40 4 40 IF= 120A IF= 60A IF= 30A 20 2 20 0 0 1 2 VF V 3 0 100 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 280 ns TVJ= 100C VR = 600V Fig. 3 Peak reverse current IRM versus -diF/dt 120 V TVJ= 100C IF = 60A tfr V FR 2.0 1.2 s tfr 0.8 1.5 Kf 1.0 I RM trr 240 IF= 120A IF= 60A IF= 30A VFR 80 200 0.5 Qr 40 0.4 0.0 0 40 80 120 C 160 TVJ 160 0 200 400 600 -diF/dt 800 A/ms 1000 0 0 200 400 0.0 600 A/ms 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W ZthJC Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.324 0.125 0.201 ti (s) 0.0052 0.0003 0.038 0.1 0.01 0.0001 DSEP 60-12A 0.001 0.01 0.1 1 t s 10 Fig. 7 Transient thermal resistance junction to case 914 NOTE: Fig. 2 to Fig. 6 shows typical values (c) 2000 IXYS All rights reserved 2-2 |
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